This program supports customer design investments by ensuring that selected devices are available during a minimum of 10 or 7 years from the notification date.Ĭheck-out the list of our certified STPOWER transistors and modules here. STPOWER SiC MOSFETs are also included in the program, with a minimum longevity commitment of 7 years.
ST has certified several ST POWER high-voltage MOSFETs, IGBTs and Intelligent Power Modules (IPMs) for 10-year longevity. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. ST’s 10-year longevity commitment program ensures stable and continuous supply for customers IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. discrete and module) and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime. Our wide ST POWER product portfolio combined with state-of-the art packaging (i.e. Due to the improved thermal design of ST's power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the industry’s highest temperature rating of 200 ☌ and voltage ranging from 650 to 2200 V. As well as, our Gallium Nitride on silicon substrate (GaN/Si) transistors allow highest efficiency and highest power density thanks to outstanding specific dynamic on-state resistance and small capacitances ranging to 100, 650 and 900 V. ST offers a wide portfolio of power MOSFETs ranging from -100 to 1700 V, IGBTs with breakdown voltages ranging from 300 to 1700 V and power bipolar transistors ranging from 15 to 1700 V. Leading-edge power technologies for both high-and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors belonging to the ST POWER family.
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